Prati E., Shinada T. (Eds.) Single-Atom Nanoelectronics

Taylor & Francis Group, 2013. — 374 p.Single-Atom Nanoelectronics covers the fabrication of single-atom devices and related technology, as well as the relevant electronic equipment and the intriguing new phenomena related to single-atom and single-electron effects in quantum devices. It also covers the alternative approaches related to both silicon- and carbon-based technologies, also from the point of view of large-scale industrial production. The publication provides a comprehensive picture of the state of the art at the cutting edge and constitutes a milestone in the emerging field of beyond-CMOS technology. Although there are numerous publications on nanoelectronics, no book highlights the effect of a single atom on device performance, which can be beneficial for making extensive use of CMOS technologies. This book is the first to deal with topics related to single-atom control, which is the final frontier for nanoelectronics.Quantum Information in Silicon Devices Based on Individual Dopants
Theory and Simulations of Controlled Electronic States Bound to a Single Dopant in Silicon
Using Scanning Tunneling Microscopy to Realize Atomic-Scale Silicon Devices
Deterministic Single-Ion Implantation Method for Extending CMOS Technologies
Single-Ion Implantation for Quantum Computing
Single Atom Imaging—Dopant Atoms in Silicon-Based Semiconductor Devices—by Atom Probe Tomography
Low-Noise Current Measurements on Quantum Devices Operating at Cryogenic Temperature
Orbital Structure and Transport Characteristics of Single Donors
Single-Donor Transport Spectroscopy in Ultimate Silicon Transistors
A Spin Quantum Bit Architecture with Coupled Donors and Quantum Dots in Silicon
Single Spins in Diamond: Novel Quantum Devices and Atomic Sensors
Silicon-Based Single-Dopant Devices and Integration with Photons
Circuits with Single-Atom Devices