Park B.-E., Ishiwara H., Okuyama M, Sakai S., Yoon S.-M. (eds.) Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications

New York: Springer, 2016. — 350 p. — ISBN: 978-94-024-0841-6.This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact.
Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time.
This book aims to provide readers with the development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass or plastic substrates as well as in conventional Si electronics.
The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.Features, Principles and Development of Ferroelectric-Gate Field-Effect Transistors.
Background of Ferroelectric Memories.
Degradation and Improvement of Memorized States in MFIS Structures.
Improvement of Ferroelectric Gate FETs.Practical Characteristics of Inorganic Ferroelectric-Gate FETs: Si-Based Ferroelectric-Gate Field Effect Transistors.
Development of High-Endurance and Long-Retention FeFETs of Pt/Ca_ySr_1-yBi₂Ta₂O₉/(HfO₂)_x(Al₂O₃)_1-x/Si Gate Stacks.Basic Fabrication Process and Characterization of Pt/SBT/HAO/Si FeFETs.
Requirements to the Layers in MFIS.
Preparation of HAO for Pt/SBT/HAO/Si Gate Stack.
Nitriding and Oxinitriding Si of MFIS FeFET.
Using CSBT Instead of SBT in FeFET.Nonvolatile Field-Effect Transistors Using Ferroelectric Doped НfO₂ Films.FeFET Integration.
Memory Properties of Ferroelectric Hafnium Oxide.
Hafnium Oxide Based Ferroelectric Field Effect Transistor.
Summary and Outlook.Practical Characteristics of Inorganic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors.
Oxide-Channel Ferroelectric-Gate Thin Film Transistors with Nonvolatile Memory Function.Features of Ferroelectric Gate Insulator.
Charge Density of ITO Channel FGTs.
Electrical Properties of ITO Channel FGTs.
Transparent ITO/BLT FGT.
ITO-Channel TFTs with High-k Gate Insulator.
Conclusions.
ZnO/Pb(Zr,Ti)O₃ Gate Structure Ferroelectric FETs.Experimental Procedure.
Device Characteristics and Discussions.Novel Fcrrocicetric-Gate Field-Effect Thin Film Transistors (FeTFTs): Controlled Polarization-Type FeTFTs.Fabrication and Properties of CP-Type FeTFTs.
Effect of Spontaneous Polarization of the Polar Semiconductor on the Electronic Structure of the Poly(Vinylidene Fluoride-Trilluoroethylene)/ZnO Heterostructures.
Conclusions.Practical Characteristics of Organic Ferroelectric-Gate FETs: Si-Based Ferroelectric-Gate Field Effect Transistors.
Non-volatile Ferroelectric Memory Transistors Using PVDF and P(VDF-TrFE) Thin Films.Experimental Procedure.
Results and Discussion.
Conclusions.
Poly(Vinylidenefluoride-Trifluoroethylene) P(VDF-TrFE)/Semiconductor Structure Ferroelectric-Gate FETs.Ferroelectric Properties of VDF Based Polymers.
Ferroelectric P(VDF-TrFE) Gate FeFETs.Practical Characteristics of Organic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors.
P(VDF-TeFE)/Organie Semiconductor Structure Ferroelectric-Gate FETs.Experimental Procedure.
Results and Discussion.
Conclusions.
Nonvolatile Ferroelectric Memory Thin-Filin Transistors Using a Poly(Vinylidcne Fluoride Trifluorocthylene) Gate Insulator and an Oxide Semiconductor Active Channel.Choice of Materials.
Design of Device Structures.
Process Optimization.
Promising Applications.
Memory Array Integration.
Remaining Technical Issues.
Conclusions and Outlooks.
Practical Characteristics of Organic Ferroelectric-Gate FETs: Ferroelectric-Gate Field Effect Transistors with Flexible Substrates.
Mechanically Flexible Non-volatile Field Effect Transistor Memories with Ferroelectric Polymers.FeFETs with Ferroelectric Polymers.
FeFET on Flexible Substrates.
Characterization of Mechanical Properties of a Flexible FeFET.
Conclusions.
Non-volatile Paper Transistors with Poly(vinylidene fluoride-trifluoroethylene) Thin Filin Using a Solution Processing Method.Experimental Procedure.
Results and Discussion.Applications and Future Prospects.
Novel Application of FeFETs to NAND Flash Memory Circuits.Fabrication Process.
Test Element Group Characteristics.
64 Kb Fe-NAND Flash Memory.Novel Applications of Antiferroelectrics and Relaxor Ferroelectrics: A Material’s Point of View.Electrostatic Supercapacitors.
Electrocaloric Cooling.
Pyroelectric Energy Harvesting.
IR Sensing.
Perspectives.
Conclusions.
Adaptive-Learning Synaptic Devices Using Ferroelectric-Gate Field-Effect Transistors for Neuromorphic Applications.Operation Principles of Adaptive-Learning Neuron Circuits.
Fundamental Characteristics Ferroelectric Synapse FETs.
Electrically Modifiable Synapse Array Using MFSFET.
Adaptive-Learning Neuron Circuit Composed of an MFSFET and a CUJT Oscillation Circuit.
Improvement of Output Characteristics in Ferroelectric Neuron Circuit Using CMOS Schmitt-Trigger Oscillator.
Improvement of Memory Retention in Ferroelectric Neuron Circuit Using MFMIS-Structured Synapse Device.
Conclusions and Outlooks.
Applications of Oxide Channel Ferroelectric-Gate Thin Film Transistors.Memory Circuit Application Using Ferroelectric Gate Transistors.
Fabrication of NAND Memory Cell Arrays Using Oxide-Channel Ferroelectric Gate Transistors with 2-Tr Memory Cell Configuration.
Solution Process for Oxide-Channel Ferroelectric-Gate Transistors.
Summary and Conclusion.