Consonni V., Feuillet G. (Eds.) Wide Band Gap Semiconductor Nanowires for Optical Devices 1: Low-Dimensionality Effects and Growth

Wiley-ISTE, 2014. — 399 p. – (Electronics Engeniring Series). — ISBN: 978-1-84821-597-9.GaN and ZnO nanowires can by grown using a wide variety of methods from physical vapor deposition to wet chemistry for optical devices. This book starts by presenting the similarities and differences between GaN and ZnO materials, as well as the assets and current limitations of nanowires for their use in optical devices, including feasibility and perspectives. It then focuses on the nucleation and growth mechanisms of ZnO and GaN nanowires, grown by various chemical and physical methods. Finally, it describes the formation of nanowire heterostructures applied to optical devices.GaN and ZnO Nanowires: Low-Dimensionality Effects
Quantum and Optical Confinement
Stress Relaxation in Nanowires With Heterostructures
Surface-Related Optical Properties of Gan-Based Nanowires
Surface Related Optical Properties of Zno Nanowires
Doping and Transport
Microstructure of Group Iii-N Nanowires
Nucleation and Growth Mechanisms of GaN and ZnO Nanowires
Ni Collector-Induced Growth of Gan Nanowires on C-Plane Sapphire by Plasma-Assisted Molecular Beam Epitaxy
Self-Induced Growth Of Gan Nanowires by Molecular Beam Epitaxy
Selective Area Growth Of Gan Nanowires by Plasma-Assisted Molecular Beam Epitaxy
Metal-Organic Vapor Phase Epitaxy Growth of Gan Nanorods
Metal-Organic Chemical Vapor Deposition Growth of Zno Nanowires
Pulsed-Laser Deposition of Zno Nanowires Christoph Peter Dietrich and Marius Grundmann
Preparation of Zno Nanorods and Nanowires by Wet Chemistry