Maiti C.K. et al. (Eds.) Strained silicon heterostructures: materials and devices

The Institution of Engineering and Technology, 2001. — 508 p. — ISBN: 0-85296-778-0.This is the first book on Si heterostructures of which we are aware covering material properties of group-IV alloy layers such as SiGe, SiC, SiGeC and strained Si and their applications. The book treats SiGe, SiGeC and strained Si heterojunction devices, namely bipolar and field effect transistors, and other devices in a single text. The book is intended for use by senior undergraduate or graduate students in Electronic and Electrical Engineering, Applied Physics and Materials Sciences, and as a reference for engineers and scientists involved in semiconductor device research and development.
The book contains extensive references for those wishing to delve deeper into individual topics. Numerous up-to-date results from journals, conference proceedings, and books are cited. More than 250 figures and 25 tables are provided for illustration purposes. We hope that the book will serve as an useful reference and guide for silicon heterostructure device research and development and stimulate further work in this exciting and expanding field.