Kasper E., Bean J.C. (Eds.) Silicon-Molecular Beam Epitaxy. Volume I

CRC Press, 2018. — 253 p. — ISBN: 978-1-351-07661-6.This is the first volume of a two-volume work covering developments in the field of growing single crystals using molecular beam epitaxy of silicon-compatible materials, their physical characteristics, and applications in semiconductor devices.
Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications.Si-MBE Growth Systems – Technology and Practic
Homoepitaxy
Models of Silicon Growth and Dopant Incorporation
Insulator over Silicon Structures
Growth of Insulators on Si by MBE
Device Application: Work to Date
Device Application: Possibilitie.